Bildteknik

Ämnesområden: Optisk utrustning
Kommittébeteckning: SIS/TK 121 (Bestämning av mikrostruktur i stål)
Källa: ISO
Svarsdatum: den 13 feb 2019
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This International Standard specifies three-dimensional (3D) structure model with related parameters, file format and fitting procedure for characterizing 3D critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 5 nm.

2 Abbreviated terms

CD

critical dimension

MBL

model-based library

MC

Monte Carlo

SE

secondary electron

SEM

scanning electron microscope/scanning electron microscopy